Jairo Velasco Jr.

TitleAssistant Professor
DivisionPhysical & Biological Sciences
DepartmentPBSci-Physics Department
Phone831 459-1806
Web Site Group website
OfficeInterdisciplinary Sci Bldg. 249
Campus Mail StopPhysics Department
Jairo Velasco Jr.

Research Interests

Jairo Velasco Jr.’s research focuses on discovering, understanding and exploiting novel physical phenomena that emerge in layered 2D materials. In particular, he is interested in probing the electronic structure of nanoscale devices based on these new and exciting materials. To perform these studies his lab employs several techniques such as low temperature transport, scanning tunneling microscopy (STM), and advanced nanofabrication.


Biography, Education and Training

2012 - 2015                             University of California President's Postdoctoral Fellow, University of California, Berkeley

2012                                        PhD, University of California, Riverside

2005                                        B.S, Syracuse University

Selected Publications

  1. J. Lee*, D. Wong*, J. Velasco Jr. †, J. Rodriguez-Nieva, S. Kahn, H.Z. Tsai, T. Taniguchi, K. Watanabe, A. Zettl, F. Wang, L. Levitov, M.F. Crommie †, "Imaging Electrostatically Confined Dirac Fermions in graphene Quantum Dots", Nature Physics (2016)  Advanced Online Publication         

  2. J. Velasco Jr.*, L. Ju*, D. Wong*, S. Kahn, J. Lee, H.Z. Tsai, C. Germany, S. Wickenburg, J. Lu, T. Taniguchi, K. Watanabe, A. Zettl, F. Wang, M.F. Crommie, "Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures", Nano Letters 16, 1620-1624 (2016)  

  3. D. Wong*, J. Velasco Jr.*, L. Ju*, J. Lee, S. Kahn, H.Z. Tsai, C. Germany, T. Taniguchi, K. Watanabe, A. Zettl, F. Wang, M. F. Crommie, “Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy”, Nature Nanotechnology 10, 949-953 (2015)

  4. J. Velasco Jr.*, Y. Lee*, F. Zhang*, K. Myhro, D. Tran, M. Deo, D. Smirnov, A. H. MacDonald, C. N. Lau, “Competing Ordered Filling Factor Two States in Bilayer Graphene”, Nature Communications 5, Article number :4550 (2014)

  5.  L. Ju*, J. Velasco Jr.*, E. Huang, S. Kahn, C. Nosiglia, Hsin-Zon Tsai, W. Yang, T. Taniguchi, K. Watanabe, Y. Zhang, G. Zhang, M. Crommie, A. Zettl, F. Wang, “Photo-induced Doping in Graphene/Boron Nitride Heterostructures” Nature Nanotechnology 9, 348–352 (2014)

  6. J. Velasco Jr., Y. Lee, L. Jing, G. Liu, W. Bao, and C. N. Lau, “Quantum Transport in Double-gated Graphene Devices”, Solid State Communications 152, 1301 (2012)

  7. J. Velasco Jr., L. Jing, W. Bao, Y. Lee, P. Kratz, V. Aji, M. Bockrath, C.N. Lau, C. Varma, R. Stillwell, D. Smirnov, F. Zhang, J. Jung, A.H. MacDonald, “Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene”, Nature Nanotechnology 7, 156–160 (2012)

  8. J. Velasco Jr., Z. Zhao, H. Zhang, F. Wang, Z. Wang, P. Kratz, L. Jing, W. Bao, J. Shi and C. N. Lau, “Suspension and Measurement of Graphene and Bi2Se3 Thin Crystals” Nanotechnology 22, 285305 (2011)- Selected for cover

  9. J. Velasco Jr., G. Liu, L. Jing, P. Kratz, H. Zhang, W.Z. Bao, M. Bockrath, C.N. Lau, “Probing charging and localization in the quantum Hall regime by graphene pnp junctions”, Phys. Rev. B(R) 81, 121407 (2010) – Selected for Rapid Communications and Editor’s choice